Graphene Quantum Dots-ZnS Nanocomposites with Improved Photoelectric Performances

ZnS-graphene quantum dot (GQDs) composites were synthesized by a simple solvothermal method, in which GQDs were prepared by a hydrothermal cutting process. The products were characterized by transmission electron microscopy, atomic force microscopy, X-ray diffraction and ultraviolet-visible absorption spectroscopy. The results show that GQDs were obtained by size tailoring of 1–4 graphene layers and combined with cubic ZnS nanoparticles to form ZnS-GQDs composites. The photocurrent and electrochemical behavior of the products were evaluated by transient photocurrent responses and electrochemical impedance spectra. The photocurrent density of ZnS-GQDs achieves the value of 2.32 × 10(−5) A/cm(2), which is 2.4-times as high as that of ZnS-graphene. GQDs serve as an electrical conducting material, which decreases the conductive path and accelerates the electron transfer. The charge-transfer resistance of ZnS-GQDs is much lower than that of ZnS-graphene and pure ZnS due to the effective electron separation and transfer ability upon the incorporation of GQDs.