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Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2)
Quantum localization–delocalization of carriers are well described by either carrier–carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well established mainly due to complexity and sparse experimental data. Recently developed two-dimensi...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5967350/ https://www.ncbi.nlm.nih.gov/pubmed/29795384 http://dx.doi.org/10.1038/s41467-018-04474-4 |
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author | Moon, Byoung Hee Bae, Jung Jun Joo, Min-Kyu Choi, Homin Han, Gang Hee Lim, Hanjo Lee, Young Hee |
author_facet | Moon, Byoung Hee Bae, Jung Jun Joo, Min-Kyu Choi, Homin Han, Gang Hee Lim, Hanjo Lee, Young Hee |
author_sort | Moon, Byoung Hee |
collection | PubMed |
description | Quantum localization–delocalization of carriers are well described by either carrier–carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well established mainly due to complexity and sparse experimental data. Recently developed two-dimensional layered materials are ideal in describing such mesoscopic critical phenomena as they have both strong interactions and disorder. The transport in the insulating phase is well described by the soft Coulomb gap picture, which demonstrates the contribution of both interactions and disorder. Using this picture, we demonstrate the critical power law behavior of the localization length, supporting quantum criticality. We observe asymmetric critical exponents around the metal-insulator transition through temperature scaling analysis, which originates from poor screening in insulating regime and conversely strong screening in metallic regime due to free carriers. The effect of asymmetric scaling behavior is weakened in monolayer MoS(2) due to a dominating disorder. |
format | Online Article Text |
id | pubmed-5967350 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-59673502018-05-25 Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2) Moon, Byoung Hee Bae, Jung Jun Joo, Min-Kyu Choi, Homin Han, Gang Hee Lim, Hanjo Lee, Young Hee Nat Commun Article Quantum localization–delocalization of carriers are well described by either carrier–carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well established mainly due to complexity and sparse experimental data. Recently developed two-dimensional layered materials are ideal in describing such mesoscopic critical phenomena as they have both strong interactions and disorder. The transport in the insulating phase is well described by the soft Coulomb gap picture, which demonstrates the contribution of both interactions and disorder. Using this picture, we demonstrate the critical power law behavior of the localization length, supporting quantum criticality. We observe asymmetric critical exponents around the metal-insulator transition through temperature scaling analysis, which originates from poor screening in insulating regime and conversely strong screening in metallic regime due to free carriers. The effect of asymmetric scaling behavior is weakened in monolayer MoS(2) due to a dominating disorder. Nature Publishing Group UK 2018-05-24 /pmc/articles/PMC5967350/ /pubmed/29795384 http://dx.doi.org/10.1038/s41467-018-04474-4 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Moon, Byoung Hee Bae, Jung Jun Joo, Min-Kyu Choi, Homin Han, Gang Hee Lim, Hanjo Lee, Young Hee Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2) |
title | Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2) |
title_full | Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2) |
title_fullStr | Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2) |
title_full_unstemmed | Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2) |
title_short | Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2) |
title_sort | soft coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer mos(2) |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5967350/ https://www.ncbi.nlm.nih.gov/pubmed/29795384 http://dx.doi.org/10.1038/s41467-018-04474-4 |
work_keys_str_mv | AT moonbyounghee softcoulombgapandasymmetricscalingtowardsmetalinsulatorquantumcriticalityinmultilayermos2 AT baejungjun softcoulombgapandasymmetricscalingtowardsmetalinsulatorquantumcriticalityinmultilayermos2 AT joominkyu softcoulombgapandasymmetricscalingtowardsmetalinsulatorquantumcriticalityinmultilayermos2 AT choihomin softcoulombgapandasymmetricscalingtowardsmetalinsulatorquantumcriticalityinmultilayermos2 AT hanganghee softcoulombgapandasymmetricscalingtowardsmetalinsulatorquantumcriticalityinmultilayermos2 AT limhanjo softcoulombgapandasymmetricscalingtowardsmetalinsulatorquantumcriticalityinmultilayermos2 AT leeyounghee softcoulombgapandasymmetricscalingtowardsmetalinsulatorquantumcriticalityinmultilayermos2 |