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Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2)

Quantum localization–delocalization of carriers are well described by either carrier–carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well established mainly due to complexity and sparse experimental data. Recently developed two-dimensi...

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Autores principales: Moon, Byoung Hee, Bae, Jung Jun, Joo, Min-Kyu, Choi, Homin, Han, Gang Hee, Lim, Hanjo, Lee, Young Hee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5967350/
https://www.ncbi.nlm.nih.gov/pubmed/29795384
http://dx.doi.org/10.1038/s41467-018-04474-4
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author Moon, Byoung Hee
Bae, Jung Jun
Joo, Min-Kyu
Choi, Homin
Han, Gang Hee
Lim, Hanjo
Lee, Young Hee
author_facet Moon, Byoung Hee
Bae, Jung Jun
Joo, Min-Kyu
Choi, Homin
Han, Gang Hee
Lim, Hanjo
Lee, Young Hee
author_sort Moon, Byoung Hee
collection PubMed
description Quantum localization–delocalization of carriers are well described by either carrier–carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well established mainly due to complexity and sparse experimental data. Recently developed two-dimensional layered materials are ideal in describing such mesoscopic critical phenomena as they have both strong interactions and disorder. The transport in the insulating phase is well described by the soft Coulomb gap picture, which demonstrates the contribution of both interactions and disorder. Using this picture, we demonstrate the critical power law behavior of the localization length, supporting quantum criticality. We observe asymmetric critical exponents around the metal-insulator transition through temperature scaling analysis, which originates from poor screening in insulating regime and conversely strong screening in metallic regime due to free carriers. The effect of asymmetric scaling behavior is weakened in monolayer MoS(2) due to a dominating disorder.
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spelling pubmed-59673502018-05-25 Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2) Moon, Byoung Hee Bae, Jung Jun Joo, Min-Kyu Choi, Homin Han, Gang Hee Lim, Hanjo Lee, Young Hee Nat Commun Article Quantum localization–delocalization of carriers are well described by either carrier–carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well established mainly due to complexity and sparse experimental data. Recently developed two-dimensional layered materials are ideal in describing such mesoscopic critical phenomena as they have both strong interactions and disorder. The transport in the insulating phase is well described by the soft Coulomb gap picture, which demonstrates the contribution of both interactions and disorder. Using this picture, we demonstrate the critical power law behavior of the localization length, supporting quantum criticality. We observe asymmetric critical exponents around the metal-insulator transition through temperature scaling analysis, which originates from poor screening in insulating regime and conversely strong screening in metallic regime due to free carriers. The effect of asymmetric scaling behavior is weakened in monolayer MoS(2) due to a dominating disorder. Nature Publishing Group UK 2018-05-24 /pmc/articles/PMC5967350/ /pubmed/29795384 http://dx.doi.org/10.1038/s41467-018-04474-4 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Moon, Byoung Hee
Bae, Jung Jun
Joo, Min-Kyu
Choi, Homin
Han, Gang Hee
Lim, Hanjo
Lee, Young Hee
Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2)
title Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2)
title_full Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2)
title_fullStr Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2)
title_full_unstemmed Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2)
title_short Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS(2)
title_sort soft coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer mos(2)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5967350/
https://www.ncbi.nlm.nih.gov/pubmed/29795384
http://dx.doi.org/10.1038/s41467-018-04474-4
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