Cargando…
Defect-engineered epitaxial VO(2±δ) in strain engineering of heterogeneous soft crystals
The success of strain engineering has made a step further for the enhancement of material properties and the introduction of new physics, especially with the discovery of the critical roles of strain in the heterogeneous interface between two dissimilar materials (for example, FeSe/SrTiO(3)). On the...
Autores principales: | Wang, Yiping, Sun, Xin, Chen, Zhizhong, Cai, Zhonghou, Zhou, Hua, Lu, Toh-Ming, Shi, Jian |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5969812/ https://www.ncbi.nlm.nih.gov/pubmed/29806024 http://dx.doi.org/10.1126/sciadv.aar3679 |
Ejemplares similares
-
Epitaxial stabilization and phase instability of VO(2) polymorphs
por: Lee, Shinbuhm, et al.
Publicado: (2016) -
Suppression of Structural Phase Transition in VO(2) by Epitaxial Strain in Vicinity of Metal-insulator Transition
por: Yang, Mengmeng, et al.
Publicado: (2016) -
Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy
por: Summerfield, Alex, et al.
Publicado: (2016) -
Engineering Epitaxial Silicene on Functional Substrates for Nanotechnology
por: Grazianetti, Carlo, et al.
Publicado: (2019) -
Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxy
por: Lee, Moonsang, et al.
Publicado: (2018)