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Self-Catalyzed CdTe Wires

CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of produci...

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Detalles Bibliográficos
Autores principales: Baines, Tom, Papageorgiou, Giorgos, Hutter, Oliver S., Bowen, Leon, Durose, Ken, Major, Jonathan D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5977288/
https://www.ncbi.nlm.nih.gov/pubmed/29693560
http://dx.doi.org/10.3390/nano8050274
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author Baines, Tom
Papageorgiou, Giorgos
Hutter, Oliver S.
Bowen, Leon
Durose, Ken
Major, Jonathan D.
author_facet Baines, Tom
Papageorgiou, Giorgos
Hutter, Oliver S.
Bowen, Leon
Durose, Ken
Major, Jonathan D.
author_sort Baines, Tom
collection PubMed
description CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111) oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.
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spelling pubmed-59772882018-06-05 Self-Catalyzed CdTe Wires Baines, Tom Papageorgiou, Giorgos Hutter, Oliver S. Bowen, Leon Durose, Ken Major, Jonathan D. Nanomaterials (Basel) Article CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111) oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications. MDPI 2018-04-25 /pmc/articles/PMC5977288/ /pubmed/29693560 http://dx.doi.org/10.3390/nano8050274 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Baines, Tom
Papageorgiou, Giorgos
Hutter, Oliver S.
Bowen, Leon
Durose, Ken
Major, Jonathan D.
Self-Catalyzed CdTe Wires
title Self-Catalyzed CdTe Wires
title_full Self-Catalyzed CdTe Wires
title_fullStr Self-Catalyzed CdTe Wires
title_full_unstemmed Self-Catalyzed CdTe Wires
title_short Self-Catalyzed CdTe Wires
title_sort self-catalyzed cdte wires
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5977288/
https://www.ncbi.nlm.nih.gov/pubmed/29693560
http://dx.doi.org/10.3390/nano8050274
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