Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors

Ultra-high definition displays have become a trend for the current flat plane displays. In this study, the contact properties of amorphous silicon–tin oxide thin-film transistors (a-STO TFTs) employed with source/drain (S/D) electrodes were analyzed. Ohmic contact with a good device performance was...

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Detalles Bibliográficos
Autores principales: Liu, Xianzhe, Ning, Honglong, Chen, Weifeng, Fang, Zhiqiang, Yao, Rihui, Wang, Xiaofeng, Deng, Yuxi, Yuan, Weijian, Wu, Weijing, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5977307/
https://www.ncbi.nlm.nih.gov/pubmed/29724041
http://dx.doi.org/10.3390/nano8050293

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5977307/
https://www.ncbi.nlm.nih.gov/pubmed/29724041
http://dx.doi.org/10.3390/nano8050293

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