Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the [Formula: see text] ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations ba...

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Detalles Bibliográficos
Autores principales: Marconcini, Paolo, Cresti, Alessandro, Roche, Stephan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978044/
https://www.ncbi.nlm.nih.gov/pubmed/29693612
http://dx.doi.org/10.3390/ma11050667

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978044/
https://www.ncbi.nlm.nih.gov/pubmed/29693612
http://dx.doi.org/10.3390/ma11050667

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