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Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons
Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the [Formula: see text] ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations ba...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978044/ https://www.ncbi.nlm.nih.gov/pubmed/29693612 http://dx.doi.org/10.3390/ma11050667 |