Synthesis and Thermoelectric Properties of Pd-Doped ZrCoBi Half-Heusler Compounds

In this study, n-type Pd-doped ZrCo(1-x)Pd(x)Bi (x = 0, 0.03, 0.06, 0.09) half-Heusler samples were prepared by arc-melting and rapid hot-pressing sintering. The thermoelectric properties of ZrCo(1-x)Pd(x)Bi samples were analyzed and discussed. The results showed that the electrical properties of Zr...

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Detalles Bibliográficos
Autores principales: Zhao, Degang, Zuo, Min, Bo, Lin, Wang, Yongpeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5978105/
https://www.ncbi.nlm.nih.gov/pubmed/29734655
http://dx.doi.org/10.3390/ma11050728
Descripción
Sumario:In this study, n-type Pd-doped ZrCo(1-x)Pd(x)Bi (x = 0, 0.03, 0.06, 0.09) half-Heusler samples were prepared by arc-melting and rapid hot-pressing sintering. The thermoelectric properties of ZrCo(1-x)Pd(x)Bi samples were analyzed and discussed. The results showed that the electrical properties of ZrCo(1-x)Pd(x)Bi, including electrical conductivity and the Seebeck coefficient, increase due to the substitution of Pd on Co site. The lattice thermal conductivity of ZrCo(1-x)Pd(x)Bi is markedly decreased because of the Pd/Co substitution. A minimum κ(L) of 5.0 W/mK for ZrCo(0.91)Pd(0.09)Bi is achieved at 800 K. The figure of merit of ZrCo(1-x)Pd(x)Bi is boosted due to the depressed lattice thermal conductivity and the improved power factor. The highest value of figure of merit reaches 0.23 for ZrCo(0.97)Pd(0.03)Bi half-Heusler compound at 800 K.

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