Cargando…
Thermal hysteresis measurement of the VO(2) emissivity and its application in thermal rectification
Hysteresis loops in the emissivity of VO(2) thin films grown on sapphire and silicon substrates by a pulsed laser deposition process are experimentally measured through the thermal-wave resonant cavity technique. Remarkable variations of about 43% are observed in the emissivity of both VO(2) films,...
Autores principales: | , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5981426/ https://www.ncbi.nlm.nih.gov/pubmed/29855507 http://dx.doi.org/10.1038/s41598-018-26687-9 |
_version_ | 1783328043298717696 |
---|---|
author | Gomez-Heredia, C. L. Ramirez-Rincon, J. A. Ordonez-Miranda, J. Ares, O. Alvarado-Gil, J. J. Champeaux, C. Dumas-Bouchiat, F. Ezzahri, Y. Joulain, K. |
author_facet | Gomez-Heredia, C. L. Ramirez-Rincon, J. A. Ordonez-Miranda, J. Ares, O. Alvarado-Gil, J. J. Champeaux, C. Dumas-Bouchiat, F. Ezzahri, Y. Joulain, K. |
author_sort | Gomez-Heredia, C. L. |
collection | PubMed |
description | Hysteresis loops in the emissivity of VO(2) thin films grown on sapphire and silicon substrates by a pulsed laser deposition process are experimentally measured through the thermal-wave resonant cavity technique. Remarkable variations of about 43% are observed in the emissivity of both VO(2) films, within their insulator-to-metal and metal-to-insulator transitions. It is shown that: i) The principal hysteresis width (maximum slope) in the VO(2) emissivity of the VO(2) + silicon sample is around 3 times higher (lower) than the corresponding one of the VO(2) + sapphire sample. VO(2) synthesized on silicon thus exhibits a wider principal hysteresis loop with slower MIT than VO(2) on sapphire, as a result of the significant differences on the VO(2) film microstructures induced by the silicon or sapphire substrates. ii) The hysteresis width along with the rate of change of the VO(2) emissivity in a VO(2) + substrate sample can be tuned with its secondary hysteresis loop. iii) VO(2) samples can be used to build a radiative thermal diode able to operate with a rectification factor as high as 87%, when the temperature difference of its two terminals is around 17 °C. This record-breaking rectification constitutes the highest one reported in literature, for a relatively small temperature change of diode terminals. |
format | Online Article Text |
id | pubmed-5981426 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-59814262018-06-06 Thermal hysteresis measurement of the VO(2) emissivity and its application in thermal rectification Gomez-Heredia, C. L. Ramirez-Rincon, J. A. Ordonez-Miranda, J. Ares, O. Alvarado-Gil, J. J. Champeaux, C. Dumas-Bouchiat, F. Ezzahri, Y. Joulain, K. Sci Rep Article Hysteresis loops in the emissivity of VO(2) thin films grown on sapphire and silicon substrates by a pulsed laser deposition process are experimentally measured through the thermal-wave resonant cavity technique. Remarkable variations of about 43% are observed in the emissivity of both VO(2) films, within their insulator-to-metal and metal-to-insulator transitions. It is shown that: i) The principal hysteresis width (maximum slope) in the VO(2) emissivity of the VO(2) + silicon sample is around 3 times higher (lower) than the corresponding one of the VO(2) + sapphire sample. VO(2) synthesized on silicon thus exhibits a wider principal hysteresis loop with slower MIT than VO(2) on sapphire, as a result of the significant differences on the VO(2) film microstructures induced by the silicon or sapphire substrates. ii) The hysteresis width along with the rate of change of the VO(2) emissivity in a VO(2) + substrate sample can be tuned with its secondary hysteresis loop. iii) VO(2) samples can be used to build a radiative thermal diode able to operate with a rectification factor as high as 87%, when the temperature difference of its two terminals is around 17 °C. This record-breaking rectification constitutes the highest one reported in literature, for a relatively small temperature change of diode terminals. Nature Publishing Group UK 2018-05-31 /pmc/articles/PMC5981426/ /pubmed/29855507 http://dx.doi.org/10.1038/s41598-018-26687-9 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Gomez-Heredia, C. L. Ramirez-Rincon, J. A. Ordonez-Miranda, J. Ares, O. Alvarado-Gil, J. J. Champeaux, C. Dumas-Bouchiat, F. Ezzahri, Y. Joulain, K. Thermal hysteresis measurement of the VO(2) emissivity and its application in thermal rectification |
title | Thermal hysteresis measurement of the VO(2) emissivity and its application in thermal rectification |
title_full | Thermal hysteresis measurement of the VO(2) emissivity and its application in thermal rectification |
title_fullStr | Thermal hysteresis measurement of the VO(2) emissivity and its application in thermal rectification |
title_full_unstemmed | Thermal hysteresis measurement of the VO(2) emissivity and its application in thermal rectification |
title_short | Thermal hysteresis measurement of the VO(2) emissivity and its application in thermal rectification |
title_sort | thermal hysteresis measurement of the vo(2) emissivity and its application in thermal rectification |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5981426/ https://www.ncbi.nlm.nih.gov/pubmed/29855507 http://dx.doi.org/10.1038/s41598-018-26687-9 |
work_keys_str_mv | AT gomezherediacl thermalhysteresismeasurementofthevo2emissivityanditsapplicationinthermalrectification AT ramirezrinconja thermalhysteresismeasurementofthevo2emissivityanditsapplicationinthermalrectification AT ordonezmirandaj thermalhysteresismeasurementofthevo2emissivityanditsapplicationinthermalrectification AT areso thermalhysteresismeasurementofthevo2emissivityanditsapplicationinthermalrectification AT alvaradogiljj thermalhysteresismeasurementofthevo2emissivityanditsapplicationinthermalrectification AT champeauxc thermalhysteresismeasurementofthevo2emissivityanditsapplicationinthermalrectification AT dumasbouchiatf thermalhysteresismeasurementofthevo2emissivityanditsapplicationinthermalrectification AT ezzahriy thermalhysteresismeasurementofthevo2emissivityanditsapplicationinthermalrectification AT joulaink thermalhysteresismeasurementofthevo2emissivityanditsapplicationinthermalrectification |