High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al(0.83)In(0.17)N/GaN device de...

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Detalles Bibliográficos
Autores principales: Dong, Yan, Son, Dong-Hyeok, Dai, Quan, Lee, Jun-Hyeok, Won, Chul-Ho, Kim, Jeong-Gil, Chen, Dunjun, Lee, Jung-Hee, Lu, Hai, Zhang, Rong, Zheng, Youdou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5982566/
https://www.ncbi.nlm.nih.gov/pubmed/29695112
http://dx.doi.org/10.3390/s18051314

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5982566/
https://www.ncbi.nlm.nih.gov/pubmed/29695112
http://dx.doi.org/10.3390/s18051314

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