Field Effect Transistor Based on Layered NiPS(3)

Layered metal phosphochalcogenides of molecular formula, MPX(3) (M = Mn, Fe, Co, Ni, etc and X = S, Se) have been emerging as new class of semiconductors towards various catalytic and optoelectronic applications. The low cleavage energy associated with these layered chalcogenides may lead to devices with very thin semiconductor channels. Herein, we report the first successful fabrication of field effect transistor (FET) using layered NiPS(3) that reveals n-type semiconducting behavior. Devices using bulk and few-layer NiPS(3) with gold contacts show on/off ratios of ~10(3)–10(5) at 25 °C. The device characteristics reveal an increase in on-state current with decrease in threshold voltage and the Schottky barrier height is extracted to be 112 meV. Density functional theory calculations reveal various parameters that affect electron/hole doping in the layered phosphochalcogenide material.