Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured...

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Detalles Bibliográficos
Autores principales: Cui, Peng, Mo, Jianghui, Fu, Chen, Lv, Yuanjie, Liu, Huan, Cheng, Aijie, Luan, Chongbiao, Zhou, Yang, Dai, Gang, Lin, Zhaojun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5998000/
https://www.ncbi.nlm.nih.gov/pubmed/29899499
http://dx.doi.org/10.1038/s41598-018-27357-6
Descripción
Sumario:The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured and calculated source-drain resistances, the effect of the different gate lengths on the PCF scattering potential was confirmed.

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