Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured...

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Autores principales: Cui, Peng, Mo, Jianghui, Fu, Chen, Lv, Yuanjie, Liu, Huan, Cheng, Aijie, Luan, Chongbiao, Zhou, Yang, Dai, Gang, Lin, Zhaojun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5998000/
https://www.ncbi.nlm.nih.gov/pubmed/29899499
http://dx.doi.org/10.1038/s41598-018-27357-6
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author Cui, Peng
Mo, Jianghui
Fu, Chen
Lv, Yuanjie
Liu, Huan
Cheng, Aijie
Luan, Chongbiao
Zhou, Yang
Dai, Gang
Lin, Zhaojun
author_facet Cui, Peng
Mo, Jianghui
Fu, Chen
Lv, Yuanjie
Liu, Huan
Cheng, Aijie
Luan, Chongbiao
Zhou, Yang
Dai, Gang
Lin, Zhaojun
author_sort Cui, Peng
collection PubMed
description The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured and calculated source-drain resistances, the effect of the different gate lengths on the PCF scattering potential was confirmed.
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spelling pubmed-59980002018-06-21 Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors Cui, Peng Mo, Jianghui Fu, Chen Lv, Yuanjie Liu, Huan Cheng, Aijie Luan, Chongbiao Zhou, Yang Dai, Gang Lin, Zhaojun Sci Rep Article The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured and calculated source-drain resistances, the effect of the different gate lengths on the PCF scattering potential was confirmed. Nature Publishing Group UK 2018-06-13 /pmc/articles/PMC5998000/ /pubmed/29899499 http://dx.doi.org/10.1038/s41598-018-27357-6 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Cui, Peng
Mo, Jianghui
Fu, Chen
Lv, Yuanjie
Liu, Huan
Cheng, Aijie
Luan, Chongbiao
Zhou, Yang
Dai, Gang
Lin, Zhaojun
Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
title Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
title_full Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
title_fullStr Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
title_full_unstemmed Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
title_short Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
title_sort effect of different gate lengths on polarization coulomb field scattering potential in algan/gan heterostructure field-effect transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5998000/
https://www.ncbi.nlm.nih.gov/pubmed/29899499
http://dx.doi.org/10.1038/s41598-018-27357-6
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