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Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5998000/ https://www.ncbi.nlm.nih.gov/pubmed/29899499 http://dx.doi.org/10.1038/s41598-018-27357-6 |