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Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Conditions Investigated by Atomic Resolution In Situ (S)TEM

We report the formation of Bi clusters in Ga(P(1-x),Bi(x)) layers during an in situ (scanning) transmission electron microscopy ((S)TEM) annealing investigation. The non-destructive temperature regime in dependence on the tertiarybutylphosphine (TBP) pressure in the in situ cell was investigated to...

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Detalles Bibliográficos
Autores principales:	Straubinger, R., Widemann, M., Belz, J., Nattermann, L., Beyer, A., Volz, K.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5998072/ https://www.ncbi.nlm.nih.gov/pubmed/29899349 http://dx.doi.org/10.1038/s41598-018-27286-4

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