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Rectification and negative differential resistance via orbital level pinning

A donor-acceptor system, 4-thiophenyl-azafulleroid (4TPA-C(60)), is investigated at the point of HOMO/LUMO resonance and beyond to understand how negative differential resistance (NDR) features may be observed in such systems. Our previous investigation showed that charge transfer between the occupi...

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Autores principales: Thong, Aaron Zhenghui, Shaffer, Milo S. P., Horsfield, Andrew P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6002475/
https://www.ncbi.nlm.nih.gov/pubmed/29904142
http://dx.doi.org/10.1038/s41598-018-27557-0
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author Thong, Aaron Zhenghui
Shaffer, Milo S. P.
Horsfield, Andrew P.
author_facet Thong, Aaron Zhenghui
Shaffer, Milo S. P.
Horsfield, Andrew P.
author_sort Thong, Aaron Zhenghui
collection PubMed
description A donor-acceptor system, 4-thiophenyl-azafulleroid (4TPA-C(60)), is investigated at the point of HOMO/LUMO resonance and beyond to understand how negative differential resistance (NDR) features may be observed in such systems. Our previous investigation showed that charge transfer between the occupied and unoccupied states at resonance hindered crossing of the HOMO and LUMO levels, thus preventing the formation of an NDR feature. In this work, it is shown that the negative differential resistance feature of 4TPA-C(60) can be tailored based on the couplings at the metal/molecule interface. Ab initio calculations show that limited charge extraction from atomically sharp contacts results in a HOMO-LUMO pinning effect which delays the onset of the NDR feature. Subsequent unpinning of the states can only occur when additional charge extraction channels enter the bias window, highlighting an important role which non-frontier states play in charge transport. The proposed charge transfer mechanism is then exploited by introducing a fluorine atom into the C(60) cage to tune the energies of the acceptor, and narrow the width of the current peak. These findings not only demonstrate the importance of the metal/molecule interface in the design of molecular electronic architectures but also serve to inform future design of molecular diodes and RTDs.
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spelling pubmed-60024752018-06-26 Rectification and negative differential resistance via orbital level pinning Thong, Aaron Zhenghui Shaffer, Milo S. P. Horsfield, Andrew P. Sci Rep Article A donor-acceptor system, 4-thiophenyl-azafulleroid (4TPA-C(60)), is investigated at the point of HOMO/LUMO resonance and beyond to understand how negative differential resistance (NDR) features may be observed in such systems. Our previous investigation showed that charge transfer between the occupied and unoccupied states at resonance hindered crossing of the HOMO and LUMO levels, thus preventing the formation of an NDR feature. In this work, it is shown that the negative differential resistance feature of 4TPA-C(60) can be tailored based on the couplings at the metal/molecule interface. Ab initio calculations show that limited charge extraction from atomically sharp contacts results in a HOMO-LUMO pinning effect which delays the onset of the NDR feature. Subsequent unpinning of the states can only occur when additional charge extraction channels enter the bias window, highlighting an important role which non-frontier states play in charge transport. The proposed charge transfer mechanism is then exploited by introducing a fluorine atom into the C(60) cage to tune the energies of the acceptor, and narrow the width of the current peak. These findings not only demonstrate the importance of the metal/molecule interface in the design of molecular electronic architectures but also serve to inform future design of molecular diodes and RTDs. Nature Publishing Group UK 2018-06-14 /pmc/articles/PMC6002475/ /pubmed/29904142 http://dx.doi.org/10.1038/s41598-018-27557-0 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Thong, Aaron Zhenghui
Shaffer, Milo S. P.
Horsfield, Andrew P.
Rectification and negative differential resistance via orbital level pinning
title Rectification and negative differential resistance via orbital level pinning
title_full Rectification and negative differential resistance via orbital level pinning
title_fullStr Rectification and negative differential resistance via orbital level pinning
title_full_unstemmed Rectification and negative differential resistance via orbital level pinning
title_short Rectification and negative differential resistance via orbital level pinning
title_sort rectification and negative differential resistance via orbital level pinning
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6002475/
https://www.ncbi.nlm.nih.gov/pubmed/29904142
http://dx.doi.org/10.1038/s41598-018-27557-0
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