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Toward the use of CVD-grown MoS(2) nanosheets as field-emission source

Densely populated edge-terminated vertically aligned two-dimensional MoS(2) nanosheets (NSs) with thicknesses ranging from 5 to 20 nm were directly synthesized on Mo films deposited on SiO(2) by sulfurization. The quality of the obtained NSs was analyzed by scanning electron and transmission electro...

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Detalles Bibliográficos
Autores principales: Deokar, Geetanjali, Rajput, Nitul S, Li, Junjie, Deepak, Francis Leonard, Ou-Yang, Wei, Reckinger, Nicolas, Bittencourt, Carla, Colomer, Jean-Francois, Jouiad, Mustapha
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6009318/
https://www.ncbi.nlm.nih.gov/pubmed/29977702
http://dx.doi.org/10.3762/bjnano.9.160
Descripción
Sumario:Densely populated edge-terminated vertically aligned two-dimensional MoS(2) nanosheets (NSs) with thicknesses ranging from 5 to 20 nm were directly synthesized on Mo films deposited on SiO(2) by sulfurization. The quality of the obtained NSs was analyzed by scanning electron and transmission electron microscopy, and Raman and X-ray photoelectron spectroscopy. The as-grown NSs were then successfully transferred to the substrates using a wet chemical etching method. The transferred NSs sample showed excellent field-emission properties. A low turn-on field of 3.1 V/μm at a current density of 10 µA/cm(2) was measured. The low turn-on field is attributed to the morphology of the NSs exhibiting vertically aligned sheets of MoS(2) with sharp and exposed edges. Our findings show that the fabricated MoS(2) NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips.