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Robust midgap states in band-inverted junctions under electric and magnetic fields

Several IV–VI semiconductor compounds made of heavy atoms, such as Pb(1)(−x)Sn(x)Te, may undergo band-inversion at the L point of the Brillouin zone upon variation of their chemical composition. This inversion gives rise to topologically distinct phases, characterized by a change in a topological in...

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Detalles Bibliográficos
Autores principales:	Díaz-Fernández, Álvaro, del Valle, Natalia, Domínguez-Adame, Francisco
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2018
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6009331/ https://www.ncbi.nlm.nih.gov/pubmed/29977675 http://dx.doi.org/10.3762/bjnano.9.133

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