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Sustainable p-type copper selenide solar material with ultra-large absorption coefficient

Earth-abundant solar absorber materials with large optical absorption coefficients in the visible enable the fabrication of low-cost high-efficiency single and multi-junction thin-film solar cells. Here, we report a new p-type semiconductor, Cu(4)TiSe(4) (CTSe), featuring indirect (1.15 eV) and dire...

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Detalles Bibliográficos
Autores principales: Chen, Erica M., Williams, Logan, Olvera, Alan, Zhang, Cheng, Zhang, Mingfei, Shi, Guangsha, Heron, John T., Qi, Liang, Guo, L. Jay, Kioupakis, Emmanouil, Poudeu, Pierre F. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Royal Society of Chemistry 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6009434/
https://www.ncbi.nlm.nih.gov/pubmed/30009012
http://dx.doi.org/10.1039/c8sc00873f
Descripción
Sumario:Earth-abundant solar absorber materials with large optical absorption coefficients in the visible enable the fabrication of low-cost high-efficiency single and multi-junction thin-film solar cells. Here, we report a new p-type semiconductor, Cu(4)TiSe(4) (CTSe), featuring indirect (1.15 eV) and direct (1.34 eV) band gaps in the optimal range for solar absorber materials. CTSe crystallizes in a new noncentrosymmetric cubic structure (space group F4[combining macron]3c) in which CuSe(4) tetrahedra share edges and corners to form octahedral anionic clusters, [Cu(4)Se(4)](4–), which in turn share corners to build the three-dimensional framework, with Ti(4+) ions located at tetrahedral interstices within the channels. The unique crystal structure and the Ti 3d orbital character of the conduction band of CTSe give rise to near-optimal band gap values and ultra-large absorption coefficients (larger than 10(5) cm(–1)) throughout the visible range, which are promising for scalable low-cost high-efficiency CTSe-based thin-film solar cells.