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Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a h...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6010905/ https://www.ncbi.nlm.nih.gov/pubmed/29938188 http://dx.doi.org/10.1002/advs.201800096 |
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author | Wu, Xing Yu, Kaihao Cha, Dongkyu Bosman, Michel Raghavan, Nagarajan Zhang, Xixiang Li, Kun Liu, Qi Sun, Litao Pey, Kinleong |
author_facet | Wu, Xing Yu, Kaihao Cha, Dongkyu Bosman, Michel Raghavan, Nagarajan Zhang, Xixiang Li, Kun Liu, Qi Sun, Litao Pey, Kinleong |
author_sort | Wu, Xing |
collection | PubMed |
description | Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n(++) Si as the bottom electrode with Ni‐electrode/HfO(x)/SiO(2) asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfO(x)/SiO(2) junction and n(++) Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories. |
format | Online Article Text |
id | pubmed-6010905 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-60109052018-06-22 Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects Wu, Xing Yu, Kaihao Cha, Dongkyu Bosman, Michel Raghavan, Nagarajan Zhang, Xixiang Li, Kun Liu, Qi Sun, Litao Pey, Kinleong Adv Sci (Weinh) Full Papers Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n(++) Si as the bottom electrode with Ni‐electrode/HfO(x)/SiO(2) asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfO(x)/SiO(2) junction and n(++) Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories. John Wiley and Sons Inc. 2018-04-14 /pmc/articles/PMC6010905/ /pubmed/29938188 http://dx.doi.org/10.1002/advs.201800096 Text en © 2018 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Full Papers Wu, Xing Yu, Kaihao Cha, Dongkyu Bosman, Michel Raghavan, Nagarajan Zhang, Xixiang Li, Kun Liu, Qi Sun, Litao Pey, Kinleong Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects |
title | Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects |
title_full | Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects |
title_fullStr | Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects |
title_full_unstemmed | Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects |
title_short | Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects |
title_sort | atomic scale modulation of self‐rectifying resistive switching by interfacial defects |
topic | Full Papers |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6010905/ https://www.ncbi.nlm.nih.gov/pubmed/29938188 http://dx.doi.org/10.1002/advs.201800096 |
work_keys_str_mv | AT wuxing atomicscalemodulationofselfrectifyingresistiveswitchingbyinterfacialdefects AT yukaihao atomicscalemodulationofselfrectifyingresistiveswitchingbyinterfacialdefects AT chadongkyu atomicscalemodulationofselfrectifyingresistiveswitchingbyinterfacialdefects AT bosmanmichel atomicscalemodulationofselfrectifyingresistiveswitchingbyinterfacialdefects AT raghavannagarajan atomicscalemodulationofselfrectifyingresistiveswitchingbyinterfacialdefects AT zhangxixiang atomicscalemodulationofselfrectifyingresistiveswitchingbyinterfacialdefects AT likun atomicscalemodulationofselfrectifyingresistiveswitchingbyinterfacialdefects AT liuqi atomicscalemodulationofselfrectifyingresistiveswitchingbyinterfacialdefects AT sunlitao atomicscalemodulationofselfrectifyingresistiveswitchingbyinterfacialdefects AT peykinleong atomicscalemodulationofselfrectifyingresistiveswitchingbyinterfacialdefects |