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Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a h...

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Autores principales: Wu, Xing, Yu, Kaihao, Cha, Dongkyu, Bosman, Michel, Raghavan, Nagarajan, Zhang, Xixiang, Li, Kun, Liu, Qi, Sun, Litao, Pey, Kinleong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6010905/
https://www.ncbi.nlm.nih.gov/pubmed/29938188
http://dx.doi.org/10.1002/advs.201800096
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author Wu, Xing
Yu, Kaihao
Cha, Dongkyu
Bosman, Michel
Raghavan, Nagarajan
Zhang, Xixiang
Li, Kun
Liu, Qi
Sun, Litao
Pey, Kinleong
author_facet Wu, Xing
Yu, Kaihao
Cha, Dongkyu
Bosman, Michel
Raghavan, Nagarajan
Zhang, Xixiang
Li, Kun
Liu, Qi
Sun, Litao
Pey, Kinleong
author_sort Wu, Xing
collection PubMed
description Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n(++) Si as the bottom electrode with Ni‐electrode/HfO(x)/SiO(2) asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfO(x)/SiO(2) junction and n(++) Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.
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spelling pubmed-60109052018-06-22 Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects Wu, Xing Yu, Kaihao Cha, Dongkyu Bosman, Michel Raghavan, Nagarajan Zhang, Xixiang Li, Kun Liu, Qi Sun, Litao Pey, Kinleong Adv Sci (Weinh) Full Papers Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n(++) Si as the bottom electrode with Ni‐electrode/HfO(x)/SiO(2) asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfO(x)/SiO(2) junction and n(++) Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories. John Wiley and Sons Inc. 2018-04-14 /pmc/articles/PMC6010905/ /pubmed/29938188 http://dx.doi.org/10.1002/advs.201800096 Text en © 2018 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Full Papers
Wu, Xing
Yu, Kaihao
Cha, Dongkyu
Bosman, Michel
Raghavan, Nagarajan
Zhang, Xixiang
Li, Kun
Liu, Qi
Sun, Litao
Pey, Kinleong
Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
title Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
title_full Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
title_fullStr Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
title_full_unstemmed Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
title_short Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
title_sort atomic scale modulation of self‐rectifying resistive switching by interfacial defects
topic Full Papers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6010905/
https://www.ncbi.nlm.nih.gov/pubmed/29938188
http://dx.doi.org/10.1002/advs.201800096
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