Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a h...

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Detalles Bibliográficos
Autores principales: Wu, Xing, Yu, Kaihao, Cha, Dongkyu, Bosman, Michel, Raghavan, Nagarajan, Zhang, Xixiang, Li, Kun, Liu, Qi, Sun, Litao, Pey, Kinleong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2018
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6010905/
https://www.ncbi.nlm.nih.gov/pubmed/29938188
http://dx.doi.org/10.1002/advs.201800096

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6010905/
https://www.ncbi.nlm.nih.gov/pubmed/29938188
http://dx.doi.org/10.1002/advs.201800096

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