Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free electron concentration in InN layers from 2·10(19) cm(−...

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Autores principales: Andreev, B. A., Kudryavtsev, K. E., Yablonskiy, A. N., Lobanov, D. N., Bushuykin, P. A., Krasilnikova, L. V., Skorokhodov, E. V., Yunin, P. A., Novikov, A. V., Davydov, V. Yu, Krasilnik, Z. F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6013448/
https://www.ncbi.nlm.nih.gov/pubmed/29930345
http://dx.doi.org/10.1038/s41598-018-27911-2
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author Andreev, B. A.
Kudryavtsev, K. E.
Yablonskiy, A. N.
Lobanov, D. N.
Bushuykin, P. A.
Krasilnikova, L. V.
Skorokhodov, E. V.
Yunin, P. A.
Novikov, A. V.
Davydov, V. Yu
Krasilnik, Z. F.
author_facet Andreev, B. A.
Kudryavtsev, K. E.
Yablonskiy, A. N.
Lobanov, D. N.
Bushuykin, P. A.
Krasilnikova, L. V.
Skorokhodov, E. V.
Yunin, P. A.
Novikov, A. V.
Davydov, V. Yu
Krasilnik, Z. F.
author_sort Andreev, B. A.
collection PubMed
description The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free electron concentration in InN layers from 2·10(19) cm(−3) to 3·10(17) cm(−3). The main necessary conditions for achieving the stimulated emission from epitaxial InN layers are defined. In the best quality samples, a threshold excitation power density is obtained to be as low as 400 W/cm(2) at T = 8 K and the stimulated emission is observed up to 215 K. In this way, the feasibility of InN-based lasers as well as the potentials of crystalline indium nitride as a promising photonic material are demonstrated.
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spelling pubmed-60134482018-06-27 Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures Andreev, B. A. Kudryavtsev, K. E. Yablonskiy, A. N. Lobanov, D. N. Bushuykin, P. A. Krasilnikova, L. V. Skorokhodov, E. V. Yunin, P. A. Novikov, A. V. Davydov, V. Yu Krasilnik, Z. F. Sci Rep Article The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free electron concentration in InN layers from 2·10(19) cm(−3) to 3·10(17) cm(−3). The main necessary conditions for achieving the stimulated emission from epitaxial InN layers are defined. In the best quality samples, a threshold excitation power density is obtained to be as low as 400 W/cm(2) at T = 8 K and the stimulated emission is observed up to 215 K. In this way, the feasibility of InN-based lasers as well as the potentials of crystalline indium nitride as a promising photonic material are demonstrated. Nature Publishing Group UK 2018-06-21 /pmc/articles/PMC6013448/ /pubmed/29930345 http://dx.doi.org/10.1038/s41598-018-27911-2 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Andreev, B. A.
Kudryavtsev, K. E.
Yablonskiy, A. N.
Lobanov, D. N.
Bushuykin, P. A.
Krasilnikova, L. V.
Skorokhodov, E. V.
Yunin, P. A.
Novikov, A. V.
Davydov, V. Yu
Krasilnik, Z. F.
Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures
title Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures
title_full Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures
title_fullStr Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures
title_full_unstemmed Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures
title_short Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures
title_sort towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline inn structures
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6013448/
https://www.ncbi.nlm.nih.gov/pubmed/29930345
http://dx.doi.org/10.1038/s41598-018-27911-2
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