Effects of overlayer capping and lattice strain on perpendicular magnetic anisotropy of TM|FePt|MgO heterostructures

Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing the strong perpendicular magnetocrystalline anisotropy (PMA) are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips. To date, it is an urgent and critical...

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Detalles Bibliográficos
Autores principales: Han, Xiaocui, Cui, Hong, Liu, Bo, Tian, Cunling, Wang, Junzhong, Chen, Hong, Yuan, Hongkuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6013451/
https://www.ncbi.nlm.nih.gov/pubmed/29930342
http://dx.doi.org/10.1038/s41598-018-27424-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6013451/
https://www.ncbi.nlm.nih.gov/pubmed/29930342
http://dx.doi.org/10.1038/s41598-018-27424-y

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