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Analysis of Indium Oxidation State on the Electronic Structure and Optical Properties of TiO(2)

Due to the high formation energy of Indium interstitial defect in the TiO(2) lattice, the most probable location for Indium dopant is substitutional sites. Replacing Ti by In atom in the anatase TiO(2) shifted the absorption edge of TiO(2) towards visible regime. Indium doping tuned the band structu...

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Detalles Bibliográficos
Autores principales:	Khan, Matiullah, Lan, Zhenghua, Zeng, Yi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6025419/ https://www.ncbi.nlm.nih.gov/pubmed/29874828 http://dx.doi.org/10.3390/ma11060952

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