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Highly stable QLEDs with improved hole injection via quantum dot structure tailoring

For the state-of-the-art quantum dot light-emitting diodes, while the ZnO nanoparticle layers can provide effective electron injections into quantum dots layers, the hole transporting materials usually cannot guarantee sufficient hole injection owing to the deep valence band of quantum dots. Develop...

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Autores principales: Cao, Weiran, Xiang, Chaoyu, Yang, Yixing, Chen, Qi, Chen, Liwei, Yan, Xiaolin, Qian, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6031613/
https://www.ncbi.nlm.nih.gov/pubmed/29973590
http://dx.doi.org/10.1038/s41467-018-04986-z
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author Cao, Weiran
Xiang, Chaoyu
Yang, Yixing
Chen, Qi
Chen, Liwei
Yan, Xiaolin
Qian, Lei
author_facet Cao, Weiran
Xiang, Chaoyu
Yang, Yixing
Chen, Qi
Chen, Liwei
Yan, Xiaolin
Qian, Lei
author_sort Cao, Weiran
collection PubMed
description For the state-of-the-art quantum dot light-emitting diodes, while the ZnO nanoparticle layers can provide effective electron injections into quantum dots layers, the hole transporting materials usually cannot guarantee sufficient hole injection owing to the deep valence band of quantum dots. Developing proper hole transporting materials to match energy levels with quantum dots remains a great challenge to further improve the device efficiency and operation lifetime. Here we demonstrate high-performance quantum dot light-emitting diodes with much extended operation lifetime using quantum dots with tailored energy band structures that are favorable for hole injections. These devices show a T(95) operation lifetime of more than 2300 h with an initial brightness of 1000 cd m(−2), and an equivalent T(50) lifetime at 100 cd m(−2) of more than 2,200,000 h, which meets the industrial requirement for display applications.
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spelling pubmed-60316132018-07-06 Highly stable QLEDs with improved hole injection via quantum dot structure tailoring Cao, Weiran Xiang, Chaoyu Yang, Yixing Chen, Qi Chen, Liwei Yan, Xiaolin Qian, Lei Nat Commun Article For the state-of-the-art quantum dot light-emitting diodes, while the ZnO nanoparticle layers can provide effective electron injections into quantum dots layers, the hole transporting materials usually cannot guarantee sufficient hole injection owing to the deep valence band of quantum dots. Developing proper hole transporting materials to match energy levels with quantum dots remains a great challenge to further improve the device efficiency and operation lifetime. Here we demonstrate high-performance quantum dot light-emitting diodes with much extended operation lifetime using quantum dots with tailored energy band structures that are favorable for hole injections. These devices show a T(95) operation lifetime of more than 2300 h with an initial brightness of 1000 cd m(−2), and an equivalent T(50) lifetime at 100 cd m(−2) of more than 2,200,000 h, which meets the industrial requirement for display applications. Nature Publishing Group UK 2018-07-04 /pmc/articles/PMC6031613/ /pubmed/29973590 http://dx.doi.org/10.1038/s41467-018-04986-z Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Cao, Weiran
Xiang, Chaoyu
Yang, Yixing
Chen, Qi
Chen, Liwei
Yan, Xiaolin
Qian, Lei
Highly stable QLEDs with improved hole injection via quantum dot structure tailoring
title Highly stable QLEDs with improved hole injection via quantum dot structure tailoring
title_full Highly stable QLEDs with improved hole injection via quantum dot structure tailoring
title_fullStr Highly stable QLEDs with improved hole injection via quantum dot structure tailoring
title_full_unstemmed Highly stable QLEDs with improved hole injection via quantum dot structure tailoring
title_short Highly stable QLEDs with improved hole injection via quantum dot structure tailoring
title_sort highly stable qleds with improved hole injection via quantum dot structure tailoring
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6031613/
https://www.ncbi.nlm.nih.gov/pubmed/29973590
http://dx.doi.org/10.1038/s41467-018-04986-z
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