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Highly stable QLEDs with improved hole injection via quantum dot structure tailoring
For the state-of-the-art quantum dot light-emitting diodes, while the ZnO nanoparticle layers can provide effective electron injections into quantum dots layers, the hole transporting materials usually cannot guarantee sufficient hole injection owing to the deep valence band of quantum dots. Develop...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6031613/ https://www.ncbi.nlm.nih.gov/pubmed/29973590 http://dx.doi.org/10.1038/s41467-018-04986-z |
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author | Cao, Weiran Xiang, Chaoyu Yang, Yixing Chen, Qi Chen, Liwei Yan, Xiaolin Qian, Lei |
author_facet | Cao, Weiran Xiang, Chaoyu Yang, Yixing Chen, Qi Chen, Liwei Yan, Xiaolin Qian, Lei |
author_sort | Cao, Weiran |
collection | PubMed |
description | For the state-of-the-art quantum dot light-emitting diodes, while the ZnO nanoparticle layers can provide effective electron injections into quantum dots layers, the hole transporting materials usually cannot guarantee sufficient hole injection owing to the deep valence band of quantum dots. Developing proper hole transporting materials to match energy levels with quantum dots remains a great challenge to further improve the device efficiency and operation lifetime. Here we demonstrate high-performance quantum dot light-emitting diodes with much extended operation lifetime using quantum dots with tailored energy band structures that are favorable for hole injections. These devices show a T(95) operation lifetime of more than 2300 h with an initial brightness of 1000 cd m(−2), and an equivalent T(50) lifetime at 100 cd m(−2) of more than 2,200,000 h, which meets the industrial requirement for display applications. |
format | Online Article Text |
id | pubmed-6031613 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-60316132018-07-06 Highly stable QLEDs with improved hole injection via quantum dot structure tailoring Cao, Weiran Xiang, Chaoyu Yang, Yixing Chen, Qi Chen, Liwei Yan, Xiaolin Qian, Lei Nat Commun Article For the state-of-the-art quantum dot light-emitting diodes, while the ZnO nanoparticle layers can provide effective electron injections into quantum dots layers, the hole transporting materials usually cannot guarantee sufficient hole injection owing to the deep valence band of quantum dots. Developing proper hole transporting materials to match energy levels with quantum dots remains a great challenge to further improve the device efficiency and operation lifetime. Here we demonstrate high-performance quantum dot light-emitting diodes with much extended operation lifetime using quantum dots with tailored energy band structures that are favorable for hole injections. These devices show a T(95) operation lifetime of more than 2300 h with an initial brightness of 1000 cd m(−2), and an equivalent T(50) lifetime at 100 cd m(−2) of more than 2,200,000 h, which meets the industrial requirement for display applications. Nature Publishing Group UK 2018-07-04 /pmc/articles/PMC6031613/ /pubmed/29973590 http://dx.doi.org/10.1038/s41467-018-04986-z Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Cao, Weiran Xiang, Chaoyu Yang, Yixing Chen, Qi Chen, Liwei Yan, Xiaolin Qian, Lei Highly stable QLEDs with improved hole injection via quantum dot structure tailoring |
title | Highly stable QLEDs with improved hole injection via quantum dot structure tailoring |
title_full | Highly stable QLEDs with improved hole injection via quantum dot structure tailoring |
title_fullStr | Highly stable QLEDs with improved hole injection via quantum dot structure tailoring |
title_full_unstemmed | Highly stable QLEDs with improved hole injection via quantum dot structure tailoring |
title_short | Highly stable QLEDs with improved hole injection via quantum dot structure tailoring |
title_sort | highly stable qleds with improved hole injection via quantum dot structure tailoring |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6031613/ https://www.ncbi.nlm.nih.gov/pubmed/29973590 http://dx.doi.org/10.1038/s41467-018-04986-z |
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