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Electrical Detection of Charge-to-spin and Spin-to-Charge Conversion in a Topological Insulator Bi(2)Te(3) Using BN/Al(2)O(3) Hybrid Tunnel Barrier

One of the most striking properties of three-dimensional topological insulators (TIs) is spin-momentum locking, where the spin is locked at right angles to momentum and hence an unpolarized charge current creates a net spin polarization. Alternatively, if a net spin is injected into the TI surface s...

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Detalles Bibliográficos
Autores principales: Li, C. H., van ‘t Erve, O. M. J., Yan, C., Li, L., Jonker, B. T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6035191/
https://www.ncbi.nlm.nih.gov/pubmed/29980749
http://dx.doi.org/10.1038/s41598-018-28547-y
Descripción
Sumario:One of the most striking properties of three-dimensional topological insulators (TIs) is spin-momentum locking, where the spin is locked at right angles to momentum and hence an unpolarized charge current creates a net spin polarization. Alternatively, if a net spin is injected into the TI surface state system, it is distinctively associated with a unique carrier momentum and hence should generate a charge accumulation, as in the so-called inverse Edelstein effect. Here using a Fe/Al(2)O(3)/BN tunnel barrier, we demonstrate both effects in a single device in Bi(2)Te(3): the electrical detection of the spin accumulation generated by an unpolarized current flowing through the surface states, and that of the charge accumulation generated by spins injected into the surface state system. This work is the first to utilize BN as part of a hybrid tunnel barrier on TI, where we observed a high spin polarization of 93% for the TI surfaces states. The reverse spin-to-charge measurement is an independent confirmation that spin and momentum are locked in the surface states of TI, and offers additional avenues for spin manipulation. It further demonstrates the robustness and versatility of electrical access to the spin system within TI surface states, an important step towards its utilization in TI-based spintronics devices.