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The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability
In this paper, a new nanoscale double-gate junctionless tunneling field-effect transistor (DG-JL TFET) based on a Si(1−)(x)Ge(x)/Si/Ge heterojunction (HJ) structure is proposed to achieve an improved electrical performance. The effect of introducing the Si(1−)(x)Ge(x) material at the source side on...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6037014/ https://www.ncbi.nlm.nih.gov/pubmed/30013879 http://dx.doi.org/10.3762/bjnano.9.177 |