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The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

In this paper, a new nanoscale double-gate junctionless tunneling field-effect transistor (DG-JL TFET) based on a Si(1−)(x)Ge(x)/Si/Ge heterojunction (HJ) structure is proposed to achieve an improved electrical performance. The effect of introducing the Si(1−)(x)Ge(x) material at the source side on...

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Detalles Bibliográficos
Autores principales:	Ferhati, Hichem, Djeffal, Fayçal, Bentrcia, Toufik
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2018
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6037014/ https://www.ncbi.nlm.nih.gov/pubmed/30013879 http://dx.doi.org/10.3762/bjnano.9.177

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