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Site-specific ion occupation in the selectivity filter causes voltage-dependent gating in a viral K(+) channel

Many potassium channels show voltage-dependent gating without a dedicated voltage sensor domain. This is not fully understood yet, but often explained by voltage-induced changes of ion occupation in the five distinct K(+) binding sites in the selectivity filter. To better understand this mechanism o...

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Autores principales: Rauh, O., Hansen, U. P., Scheub, D. D., Thiel, G., Schroeder, I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6039446/
https://www.ncbi.nlm.nih.gov/pubmed/29991721
http://dx.doi.org/10.1038/s41598-018-28751-w
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author Rauh, O.
Hansen, U. P.
Scheub, D. D.
Thiel, G.
Schroeder, I.
author_facet Rauh, O.
Hansen, U. P.
Scheub, D. D.
Thiel, G.
Schroeder, I.
author_sort Rauh, O.
collection PubMed
description Many potassium channels show voltage-dependent gating without a dedicated voltage sensor domain. This is not fully understood yet, but often explained by voltage-induced changes of ion occupation in the five distinct K(+) binding sites in the selectivity filter. To better understand this mechanism of filter gating we measured the single-channel current and the rate constant of sub-millisecond channel closure of the viral K(+) channel Kcv(NTS) for a wide range of voltages and symmetric and asymmetric K(+) concentrations in planar lipid membranes. A model-based analysis employed a global fit of all experimental data, i.e., using a common set of parameters for current and channel closure under all conditions. Three different established models of ion permeation and various relationships between ion occupation and gating were tested. Only one of the models described the data adequately. It revealed that the most extracellular binding site (S0) in the selectivity filter functions as the voltage sensor for the rate constant of channel closure. The ion occupation outside of S0 modulates its dependence on K(+) concentration. The analysis uncovers an important role of changes in protein flexibility in mediating the effect from the sensor to the gate.
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spelling pubmed-60394462018-07-12 Site-specific ion occupation in the selectivity filter causes voltage-dependent gating in a viral K(+) channel Rauh, O. Hansen, U. P. Scheub, D. D. Thiel, G. Schroeder, I. Sci Rep Article Many potassium channels show voltage-dependent gating without a dedicated voltage sensor domain. This is not fully understood yet, but often explained by voltage-induced changes of ion occupation in the five distinct K(+) binding sites in the selectivity filter. To better understand this mechanism of filter gating we measured the single-channel current and the rate constant of sub-millisecond channel closure of the viral K(+) channel Kcv(NTS) for a wide range of voltages and symmetric and asymmetric K(+) concentrations in planar lipid membranes. A model-based analysis employed a global fit of all experimental data, i.e., using a common set of parameters for current and channel closure under all conditions. Three different established models of ion permeation and various relationships between ion occupation and gating were tested. Only one of the models described the data adequately. It revealed that the most extracellular binding site (S0) in the selectivity filter functions as the voltage sensor for the rate constant of channel closure. The ion occupation outside of S0 modulates its dependence on K(+) concentration. The analysis uncovers an important role of changes in protein flexibility in mediating the effect from the sensor to the gate. Nature Publishing Group UK 2018-07-10 /pmc/articles/PMC6039446/ /pubmed/29991721 http://dx.doi.org/10.1038/s41598-018-28751-w Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Rauh, O.
Hansen, U. P.
Scheub, D. D.
Thiel, G.
Schroeder, I.
Site-specific ion occupation in the selectivity filter causes voltage-dependent gating in a viral K(+) channel
title Site-specific ion occupation in the selectivity filter causes voltage-dependent gating in a viral K(+) channel
title_full Site-specific ion occupation in the selectivity filter causes voltage-dependent gating in a viral K(+) channel
title_fullStr Site-specific ion occupation in the selectivity filter causes voltage-dependent gating in a viral K(+) channel
title_full_unstemmed Site-specific ion occupation in the selectivity filter causes voltage-dependent gating in a viral K(+) channel
title_short Site-specific ion occupation in the selectivity filter causes voltage-dependent gating in a viral K(+) channel
title_sort site-specific ion occupation in the selectivity filter causes voltage-dependent gating in a viral k(+) channel
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6039446/
https://www.ncbi.nlm.nih.gov/pubmed/29991721
http://dx.doi.org/10.1038/s41598-018-28751-w
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