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k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects, and other novel operational principles. Knowledge of electronic structure of these systems resolved...

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Detalles Bibliográficos
Autores principales:	Lev, L. L., Maiboroda, I. O., Husanu, M.-A., Grichuk, E. S., Chumakov, N. K., Ezubchenko, I. S., Chernykh, I. A., Wang, X., Tobler, B., Schmitt, T., Zanaveskin, M. L., Valeyev, V. G., Strocov, V. N.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6041315/ https://www.ncbi.nlm.nih.gov/pubmed/29992961 http://dx.doi.org/10.1038/s41467-018-04354-x

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