Locally Gated SnS(2)/hBN Thin Film Transistors with a Broadband Photoresponse

Next-generation flexible and transparent electronics demand newer materials with superior characteristics. Tin dichalcogenides, Sn(S,Se)(2), are layered crystal materials that show promise for implementation in flexible electronics and optoelectronics. They have band gap energies that are dependent on their atomic layer number and selenium content. A variety of studies has focused in particular on tin disulfide (SnS(2)) channel transistors with conventional silicon substrates. However, the effort of interchanging the gate dielectric by utilizing high-quality hexagonal boron nitride (hBN) still remains. In this work, the hBN coupled SnS(2) thin film transistors are demonstrated with bottom-gated device configuration. The electrical transport characteristics of the SnS(2) channel transistor present a high current on/off ratio, reaching as high as 10(5) and a ten-fold enhancement in subthreshold swing compared to a high-κ dielectric covered device. We also demonstrate the spectral photoresponsivity from ultraviolet to infrared in a multi-layered SnS(2) phototransistor. The device architecture is suitable to promote diverse studied on flexible and transparent thin film transistors for further applications.