Locally Gated SnS(2)/hBN Thin Film Transistors with a Broadband Photoresponse

Next-generation flexible and transparent electronics demand newer materials with superior characteristics. Tin dichalcogenides, Sn(S,Se)(2), are layered crystal materials that show promise for implementation in flexible electronics and optoelectronics. They have band gap energies that are dependent...

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Detalles Bibliográficos
Autores principales: Chu, Dongil, Pak, Sang Woo, Kim, Eun Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6043505/
https://www.ncbi.nlm.nih.gov/pubmed/30002408
http://dx.doi.org/10.1038/s41598-018-28765-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6043505/
https://www.ncbi.nlm.nih.gov/pubmed/30002408
http://dx.doi.org/10.1038/s41598-018-28765-4

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