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Locally Gated SnS(2)/hBN Thin Film Transistors with a Broadband Photoresponse
Next-generation flexible and transparent electronics demand newer materials with superior characteristics. Tin dichalcogenides, Sn(S,Se)(2), are layered crystal materials that show promise for implementation in flexible electronics and optoelectronics. They have band gap energies that are dependent...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6043505/ https://www.ncbi.nlm.nih.gov/pubmed/30002408 http://dx.doi.org/10.1038/s41598-018-28765-4 |