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Room temperature in-plane ferroelectricity in van der Waals In(2)Se(3)

Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW fer...

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Detalles Bibliográficos
Autores principales: Zheng, Changxi, Yu, Lei, Zhu, Lin, Collins, James L., Kim, Dohyung, Lou, Yaoding, Xu, Chao, Li, Meng, Wei, Zheng, Zhang, Yupeng, Edmonds, Mark T., Li, Shiqiang, Seidel, Jan, Zhu, Ye, Liu, Jefferson Zhe, Tang, Wen-Xin, Fuhrer, Michael S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6044735/
https://www.ncbi.nlm.nih.gov/pubmed/30027116
http://dx.doi.org/10.1126/sciadv.aar7720
Descripción
Sumario:Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, β′-In(2)Se(3). The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200°C in both bulk and thin exfoliated layers of In(2)Se(3). Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties.