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Room temperature in-plane ferroelectricity in van der Waals In(2)Se(3)

Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW fer...

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Autores principales: Zheng, Changxi, Yu, Lei, Zhu, Lin, Collins, James L., Kim, Dohyung, Lou, Yaoding, Xu, Chao, Li, Meng, Wei, Zheng, Zhang, Yupeng, Edmonds, Mark T., Li, Shiqiang, Seidel, Jan, Zhu, Ye, Liu, Jefferson Zhe, Tang, Wen-Xin, Fuhrer, Michael S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6044735/
https://www.ncbi.nlm.nih.gov/pubmed/30027116
http://dx.doi.org/10.1126/sciadv.aar7720
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author Zheng, Changxi
Yu, Lei
Zhu, Lin
Collins, James L.
Kim, Dohyung
Lou, Yaoding
Xu, Chao
Li, Meng
Wei, Zheng
Zhang, Yupeng
Edmonds, Mark T.
Li, Shiqiang
Seidel, Jan
Zhu, Ye
Liu, Jefferson Zhe
Tang, Wen-Xin
Fuhrer, Michael S.
author_facet Zheng, Changxi
Yu, Lei
Zhu, Lin
Collins, James L.
Kim, Dohyung
Lou, Yaoding
Xu, Chao
Li, Meng
Wei, Zheng
Zhang, Yupeng
Edmonds, Mark T.
Li, Shiqiang
Seidel, Jan
Zhu, Ye
Liu, Jefferson Zhe
Tang, Wen-Xin
Fuhrer, Michael S.
author_sort Zheng, Changxi
collection PubMed
description Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, β′-In(2)Se(3). The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200°C in both bulk and thin exfoliated layers of In(2)Se(3). Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties.
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spelling pubmed-60447352018-07-19 Room temperature in-plane ferroelectricity in van der Waals In(2)Se(3) Zheng, Changxi Yu, Lei Zhu, Lin Collins, James L. Kim, Dohyung Lou, Yaoding Xu, Chao Li, Meng Wei, Zheng Zhang, Yupeng Edmonds, Mark T. Li, Shiqiang Seidel, Jan Zhu, Ye Liu, Jefferson Zhe Tang, Wen-Xin Fuhrer, Michael S. Sci Adv Research Articles Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, β′-In(2)Se(3). The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200°C in both bulk and thin exfoliated layers of In(2)Se(3). Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties. American Association for the Advancement of Science 2018-07-13 /pmc/articles/PMC6044735/ /pubmed/30027116 http://dx.doi.org/10.1126/sciadv.aar7720 Text en Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
spellingShingle Research Articles
Zheng, Changxi
Yu, Lei
Zhu, Lin
Collins, James L.
Kim, Dohyung
Lou, Yaoding
Xu, Chao
Li, Meng
Wei, Zheng
Zhang, Yupeng
Edmonds, Mark T.
Li, Shiqiang
Seidel, Jan
Zhu, Ye
Liu, Jefferson Zhe
Tang, Wen-Xin
Fuhrer, Michael S.
Room temperature in-plane ferroelectricity in van der Waals In(2)Se(3)
title Room temperature in-plane ferroelectricity in van der Waals In(2)Se(3)
title_full Room temperature in-plane ferroelectricity in van der Waals In(2)Se(3)
title_fullStr Room temperature in-plane ferroelectricity in van der Waals In(2)Se(3)
title_full_unstemmed Room temperature in-plane ferroelectricity in van der Waals In(2)Se(3)
title_short Room temperature in-plane ferroelectricity in van der Waals In(2)Se(3)
title_sort room temperature in-plane ferroelectricity in van der waals in(2)se(3)
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6044735/
https://www.ncbi.nlm.nih.gov/pubmed/30027116
http://dx.doi.org/10.1126/sciadv.aar7720
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