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Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer

Optical and electrical characteristics of n-type nano-crystalline-silicon oxide (n-µc-SiO:H) materials can be varied to optimize and improve the performance of a solar cell. In silicon heretojunction (SHJ) solar cells, it can be used to improve carrier selectivity and optical transmission at the fro...

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Autores principales: Kim, Sangho, Park, Jinjoo, Phong, Pham Duy, Shin, Chonghoon, Iftiquar, S. M., Yi, Junsin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6045650/
https://www.ncbi.nlm.nih.gov/pubmed/30006606
http://dx.doi.org/10.1038/s41598-018-28823-x
_version_ 1783339696884023296
author Kim, Sangho
Park, Jinjoo
Phong, Pham Duy
Shin, Chonghoon
Iftiquar, S. M.
Yi, Junsin
author_facet Kim, Sangho
Park, Jinjoo
Phong, Pham Duy
Shin, Chonghoon
Iftiquar, S. M.
Yi, Junsin
author_sort Kim, Sangho
collection PubMed
description Optical and electrical characteristics of n-type nano-crystalline-silicon oxide (n-µc-SiO:H) materials can be varied to optimize and improve the performance of a solar cell. In silicon heretojunction (SHJ) solar cells, it can be used to improve carrier selectivity and optical transmission at the front side, both of which are vitally important in device operation. For this purpose, the n-µc-SiO:H was investigated as the front surface field (FSF) layer. During film deposition, an increased CO(2) flow rate from 0 to 6 sccm resulted in changes of crystalline volume fractions from 57 to 28%, optical band-gaps from 1.98 to 2.21 eV, dark conductivities from 7.29 to 1.1 × 10(−5) S/cm, and activation energies from 0.019 to 0.29 eV, respectively. In device applications, a minimum optical reflection was estimated for the FSF layer that was fabricated with 4 sccm CO(2) (FSF-4), and therefore obtained the highest external quantum efficiency, although short circuit current density (J(sc)) was 38.83 mA/cm(2) and power conversion efficiency (PCE) was 21.64%. However, the highest PCE of 22.34% with J(sc) = 38.71 mA/cm(2) was observed with the FSF prepared with 2 sccm CO(2) (FSF-2), as the combined opto-electronic properties of FSF-2 were better than those of the FSF-4.
format Online
Article
Text
id pubmed-6045650
institution National Center for Biotechnology Information
language English
publishDate 2018
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-60456502018-07-16 Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer Kim, Sangho Park, Jinjoo Phong, Pham Duy Shin, Chonghoon Iftiquar, S. M. Yi, Junsin Sci Rep Article Optical and electrical characteristics of n-type nano-crystalline-silicon oxide (n-µc-SiO:H) materials can be varied to optimize and improve the performance of a solar cell. In silicon heretojunction (SHJ) solar cells, it can be used to improve carrier selectivity and optical transmission at the front side, both of which are vitally important in device operation. For this purpose, the n-µc-SiO:H was investigated as the front surface field (FSF) layer. During film deposition, an increased CO(2) flow rate from 0 to 6 sccm resulted in changes of crystalline volume fractions from 57 to 28%, optical band-gaps from 1.98 to 2.21 eV, dark conductivities from 7.29 to 1.1 × 10(−5) S/cm, and activation energies from 0.019 to 0.29 eV, respectively. In device applications, a minimum optical reflection was estimated for the FSF layer that was fabricated with 4 sccm CO(2) (FSF-4), and therefore obtained the highest external quantum efficiency, although short circuit current density (J(sc)) was 38.83 mA/cm(2) and power conversion efficiency (PCE) was 21.64%. However, the highest PCE of 22.34% with J(sc) = 38.71 mA/cm(2) was observed with the FSF prepared with 2 sccm CO(2) (FSF-2), as the combined opto-electronic properties of FSF-2 were better than those of the FSF-4. Nature Publishing Group UK 2018-07-13 /pmc/articles/PMC6045650/ /pubmed/30006606 http://dx.doi.org/10.1038/s41598-018-28823-x Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Kim, Sangho
Park, Jinjoo
Phong, Pham Duy
Shin, Chonghoon
Iftiquar, S. M.
Yi, Junsin
Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer
title Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer
title_full Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer
title_fullStr Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer
title_full_unstemmed Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer
title_short Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer
title_sort improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6045650/
https://www.ncbi.nlm.nih.gov/pubmed/30006606
http://dx.doi.org/10.1038/s41598-018-28823-x
work_keys_str_mv AT kimsangho improvingtheefficiencyofrearemittersiliconsolarcellusinganoptimizedntypesiliconoxidefrontsurfacefieldlayer
AT parkjinjoo improvingtheefficiencyofrearemittersiliconsolarcellusinganoptimizedntypesiliconoxidefrontsurfacefieldlayer
AT phongphamduy improvingtheefficiencyofrearemittersiliconsolarcellusinganoptimizedntypesiliconoxidefrontsurfacefieldlayer
AT shinchonghoon improvingtheefficiencyofrearemittersiliconsolarcellusinganoptimizedntypesiliconoxidefrontsurfacefieldlayer
AT iftiquarsm improvingtheefficiencyofrearemittersiliconsolarcellusinganoptimizedntypesiliconoxidefrontsurfacefieldlayer
AT yijunsin improvingtheefficiencyofrearemittersiliconsolarcellusinganoptimizedntypesiliconoxidefrontsurfacefieldlayer