Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

Power semiconductor devices require low on-resistivity and high breakdown voltages simultaneously. Vertical-type metal-oxide-semiconductor field-effect transistors (MOSFETs) meet these requirements, but have been incompleteness in diamond. Here we show vertical-type p-channel diamond MOSFETs with tr...

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Detalles Bibliográficos
Autores principales: Oi, Nobutaka, Inaba, Masafumi, Okubo, Satoshi, Tsuyuzaki, Ikuto, Kageura, Taisuke, Onoda, Shinobu, Hiraiwa, Atsushi, Kawarada, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6045668/
https://www.ncbi.nlm.nih.gov/pubmed/30006560
http://dx.doi.org/10.1038/s41598-018-28837-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6045668/
https://www.ncbi.nlm.nih.gov/pubmed/30006560
http://dx.doi.org/10.1038/s41598-018-28837-5

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