FeIn(2)S(4) Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field‐Effect Transistors

An ambipolar channel layer material is required to realize the potential benefits of ambipolar complementary metal–oxide–semiconductor field‐effect transistors, namely their compact and efficient nature, reduced reverse power dissipation, and possible applicability to highly integrated circuits. Her...

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Detalles Bibliográficos
Autores principales: Kim, Hyunjung, Tiwari, Anand P., Hwang, Eunhee, Cho, Yunhee, Hwang, Heemin, Bak, Sora, Hong, Yeseul, Lee, Hyoyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2018
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6051185/
https://www.ncbi.nlm.nih.gov/pubmed/30027040
http://dx.doi.org/10.1002/advs.201800068

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6051185/
https://www.ncbi.nlm.nih.gov/pubmed/30027040
http://dx.doi.org/10.1002/advs.201800068

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