Cargando…
Room Temperature Uniaxial Magnetic Anisotropy Induced By Fe‐Islands in the InSe Semiconductor Van Der Waals Crystal
The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore's law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semic...
Autores principales: | Moro, Fabrizio, Bhuiyan, Mahabub A., Kudrynskyi, Zakhar R., Puttock, Robert, Kazakova, Olga, Makarovsky, Oleg, Fay, Michael W., Parmenter, Christopher, Kovalyuk, Zakhar D., Fielding, Alistar J., Kern, Michal, van Slageren, Joris, Patanè, Amalia |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6051381/ https://www.ncbi.nlm.nih.gov/pubmed/30027057 http://dx.doi.org/10.1002/advs.201800257 |
Ejemplares similares
-
The Interaction of Hydrogen with the van der Waals Crystal γ-InSe
por: Felton, James, et al.
Publicado: (2020) -
High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures
por: Mudd, Garry W., et al.
Publicado: (2015) -
Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
por: Mudd, Garry W, et al.
Publicado: (2013) -
Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
por: Beardsley, Ryan, et al.
Publicado: (2016) -
Corrigendum: Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
por: Beardsley, Ryan, et al.
Publicado: (2016)