The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency. While the insertion of an InGaN/GaN superlattice (SL) with a lower In content before the growth of InGaN/GaN multiple quantum we...

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Detalles Bibliográficos
Autores principales: Zhou, Shengjun, Liu, Xingtong, Yan, Han, Gao, Yilin, Xu, Haohao, Zhao, Jie, Quan, Zhijue, Gui, Chengqun, Liu, Sheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6056468/
https://www.ncbi.nlm.nih.gov/pubmed/30038360
http://dx.doi.org/10.1038/s41598-018-29440-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6056468/
https://www.ncbi.nlm.nih.gov/pubmed/30038360
http://dx.doi.org/10.1038/s41598-018-29440-4

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