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Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions

Organolead halide perovskites have emerged as the most promising materials for various optoelectronic devices, especially solar cells, because of their excellent optoelectronic properties. Here, we present the first report of low-voltage high-gain phototransistors based on perovskite/organic-semicon...

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Detalles Bibliográficos
Autores principales: Xie, Chao, You, Peng, Liu, Zhike, Li, Li, Yan, Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6062319/
https://www.ncbi.nlm.nih.gov/pubmed/30167278
http://dx.doi.org/10.1038/lsa.2017.23
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author Xie, Chao
You, Peng
Liu, Zhike
Li, Li
Yan, Feng
author_facet Xie, Chao
You, Peng
Liu, Zhike
Li, Li
Yan, Feng
author_sort Xie, Chao
collection PubMed
description Organolead halide perovskites have emerged as the most promising materials for various optoelectronic devices, especially solar cells, because of their excellent optoelectronic properties. Here, we present the first report of low-voltage high-gain phototransistors based on perovskite/organic-semiconductor vertical heterojunctions, which show ultrahigh responsivities of ~10(9)A W(–1) and specific detectivities of ~10(14) Jones in a broadband region from the ultraviolet to the near infrared. The high sensitivity of the devices is attributed to a pronounced photogating effect that is mainly due to the long carrier lifetimes and strong light absorption in the perovskite material. In addition, flexible perovskite photodetectors have been successfully prepared via a solution process and show high sensitivity as well as excellent flexibility and bending durability. The high performance and facile solution-based fabrication of the perovskite/organic-semiconductor phototransistors indicate their promise for potential application for ultrasensitive broadband photodetection.
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spelling pubmed-60623192018-08-30 Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions Xie, Chao You, Peng Liu, Zhike Li, Li Yan, Feng Light Sci Appl Original Article Organolead halide perovskites have emerged as the most promising materials for various optoelectronic devices, especially solar cells, because of their excellent optoelectronic properties. Here, we present the first report of low-voltage high-gain phototransistors based on perovskite/organic-semiconductor vertical heterojunctions, which show ultrahigh responsivities of ~10(9)A W(–1) and specific detectivities of ~10(14) Jones in a broadband region from the ultraviolet to the near infrared. The high sensitivity of the devices is attributed to a pronounced photogating effect that is mainly due to the long carrier lifetimes and strong light absorption in the perovskite material. In addition, flexible perovskite photodetectors have been successfully prepared via a solution process and show high sensitivity as well as excellent flexibility and bending durability. The high performance and facile solution-based fabrication of the perovskite/organic-semiconductor phototransistors indicate their promise for potential application for ultrasensitive broadband photodetection. Nature Publishing Group 2017-08-11 /pmc/articles/PMC6062319/ /pubmed/30167278 http://dx.doi.org/10.1038/lsa.2017.23 Text en Copyright © 2017 The Author(s) http://creativecommons.org/licenses/by-nc-nd/4.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/
spellingShingle Original Article
Xie, Chao
You, Peng
Liu, Zhike
Li, Li
Yan, Feng
Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions
title Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions
title_full Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions
title_fullStr Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions
title_full_unstemmed Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions
title_short Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions
title_sort ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions
topic Original Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6062319/
https://www.ncbi.nlm.nih.gov/pubmed/30167278
http://dx.doi.org/10.1038/lsa.2017.23
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