Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors

The growth dynamics of Ga(In)N semiconductors by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450 °C) is here investigated. The presence of droplets at the growth surface strongly affects the adatom incorporation dynamics, making the growth rate a decreasing function of th...

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Detalles Bibliográficos
Autores principales: Azadmand, Mani, Barabani, Luca, Bietti, Sergio, Chrastina, Daniel, Bonera, Emiliano, Acciarri, Maurizio, Fedorov, Alexey, Tsukamoto, Shiro, Nötzel, Richard, Sanguinetti, Stefano
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6062559/
https://www.ncbi.nlm.nih.gov/pubmed/30050040
http://dx.doi.org/10.1038/s41598-018-28984-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6062559/
https://www.ncbi.nlm.nih.gov/pubmed/30050040
http://dx.doi.org/10.1038/s41598-018-28984-9

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