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Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors
The growth dynamics of Ga(In)N semiconductors by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450 °C) is here investigated. The presence of droplets at the growth surface strongly affects the adatom incorporation dynamics, making the growth rate a decreasing function of th...
Autores principales: | Azadmand, Mani, Barabani, Luca, Bietti, Sergio, Chrastina, Daniel, Bonera, Emiliano, Acciarri, Maurizio, Fedorov, Alexey, Tsukamoto, Shiro, Nötzel, Richard, Sanguinetti, Stefano |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6062559/ https://www.ncbi.nlm.nih.gov/pubmed/30050040 http://dx.doi.org/10.1038/s41598-018-28984-9 |
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