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Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor

In this paper we report for the first time an n-type carbon nanotube field effect transistor which is air- and water-stable, a necessary requirement for electrolyte gated CMOS circuit operation. The device is obtained through a simple process, where the native p-type transistor is converted to an n-...

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Autores principales: Joshi, Saumya, Bhatt, Vijay Deep, Jaworska, Ewa, Michalska, Agata, Maksymiuk, Krzysztof, Becherer, Markus, Gagliardi, Alessio, Lugli, Paolo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6065383/
https://www.ncbi.nlm.nih.gov/pubmed/30061700
http://dx.doi.org/10.1038/s41598-018-29882-w
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author Joshi, Saumya
Bhatt, Vijay Deep
Jaworska, Ewa
Michalska, Agata
Maksymiuk, Krzysztof
Becherer, Markus
Gagliardi, Alessio
Lugli, Paolo
author_facet Joshi, Saumya
Bhatt, Vijay Deep
Jaworska, Ewa
Michalska, Agata
Maksymiuk, Krzysztof
Becherer, Markus
Gagliardi, Alessio
Lugli, Paolo
author_sort Joshi, Saumya
collection PubMed
description In this paper we report for the first time an n-type carbon nanotube field effect transistor which is air- and water-stable, a necessary requirement for electrolyte gated CMOS circuit operation. The device is obtained through a simple process, where the native p-type transistor is converted to an n-type. This conversion is achieved by applying a tailor composed lipophilic membrane containing ion exchanger on the active channel area of the transistor. To demonstrate the use of this transistor in sensing applications, a pH sensor is fabricated. An electrolyte gated CMOS inverter using the herein proposed novel n-type transistor and a classical p-type transistor is demonstrated.
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spelling pubmed-60653832018-08-06 Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor Joshi, Saumya Bhatt, Vijay Deep Jaworska, Ewa Michalska, Agata Maksymiuk, Krzysztof Becherer, Markus Gagliardi, Alessio Lugli, Paolo Sci Rep Article In this paper we report for the first time an n-type carbon nanotube field effect transistor which is air- and water-stable, a necessary requirement for electrolyte gated CMOS circuit operation. The device is obtained through a simple process, where the native p-type transistor is converted to an n-type. This conversion is achieved by applying a tailor composed lipophilic membrane containing ion exchanger on the active channel area of the transistor. To demonstrate the use of this transistor in sensing applications, a pH sensor is fabricated. An electrolyte gated CMOS inverter using the herein proposed novel n-type transistor and a classical p-type transistor is demonstrated. Nature Publishing Group UK 2018-07-30 /pmc/articles/PMC6065383/ /pubmed/30061700 http://dx.doi.org/10.1038/s41598-018-29882-w Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Joshi, Saumya
Bhatt, Vijay Deep
Jaworska, Ewa
Michalska, Agata
Maksymiuk, Krzysztof
Becherer, Markus
Gagliardi, Alessio
Lugli, Paolo
Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor
title Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor
title_full Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor
title_fullStr Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor
title_full_unstemmed Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor
title_short Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor
title_sort ambient processed, water-stable, aqueous-gated sub 1 v n-type carbon nanotube field effect transistor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6065383/
https://www.ncbi.nlm.nih.gov/pubmed/30061700
http://dx.doi.org/10.1038/s41598-018-29882-w
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