High-Responsivity Multilayer MoSe(2) Phototransistors with Fast Response Time

There is a great interest in phototransistors based on transition metal dichalcogenides because of their interesting optoelectronic properties. However, most emphasis has been put on MoS(2) and little attention has been given to MoSe(2), which has higher optical absorbance. Here, we present a compelling case for multilayer MoSe(2) phototransistors fabricated in a bottom-gate thin-film transistor configuration on SiO(2)/Si substrates. Under 650-nm-laser, our MoSe(2) phototransistor exhibited the best performance among MoSe(2) phototransistors in literature, including the highest responsivity (1.4 × 10(5) AW(−1)), the highest specific detectivity (5.5 × 10(13) jones), and the fastest response time (1.7 ms). We also present a qualitative model to describe the device operation based on the combination of photoconductive and photogating effects. These results demonstrate the feasibility of achieving high performance in multilayer MoSe(2) phototransistors, suggesting the possibility of further enhancement in the performance of MoSe(2) phototransistors with proper device engineering.