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Synthesis and Surface-Enhanced Raman Scattering of Ultrathin SnSe(2) Nanoflakes by Chemical Vapor Deposition

As a new atomically layered, two-dimensional material, tin (IV) diselenide (SnSe(2)) has attracted extensive attention due to its compelling application in electronics and optoelectronics. However, the great challenge of impurities and the preparation of high-quality ultrathin SnSe(2) nanoflakes has...

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Detalles Bibliográficos
Autores principales: Zhang, Yongheng, Shi, Ying, Wu, Meimei, Zhang, Kun, Man, Baoyuan, Liu, Mei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6070886/
https://www.ncbi.nlm.nih.gov/pubmed/29996504
http://dx.doi.org/10.3390/nano8070515
Descripción
Sumario:As a new atomically layered, two-dimensional material, tin (IV) diselenide (SnSe(2)) has attracted extensive attention due to its compelling application in electronics and optoelectronics. However, the great challenge of impurities and the preparation of high-quality ultrathin SnSe(2) nanoflakes has hindered far-reaching research and SnSe(2) practical applications so far. Therefore, a facile chemical vapor deposition (CVD) method is employed to synthesize large-scale ultrathin SnSe(2) flakes on mica substrates using SnSe and Se powder as precursors. The structural characteristics and crystalline quality of the product were investigated. Moreover, Raman characterizations indicate that the intensity of A(1g) peak and E(g) peak, and the Raman shift of E(g) are associated with the thickness of the SnSe(2) nanoflakes. The ultrathin SnSe(2) nanoflakes show a strong surface-enhanced Raman spectroscopy (SERS) activity for Rhodamine 6G (R6G) molecules. Theoretical explanations for the enhancement principle based on the chemical enhancement mechanism and charge transfer diagram between R6G and SnSe(2) are provided. The results demonstrate that the ultrathin SnSe(2) flakes are high-quality single crystal and can be exploited for microanalysis detection and optoelectronic application.