Understanding of MoS(2)/GaN Heterojunction Diode and its Photodetection Properties

Fabrication of heterojunction between 2D molybdenum disulfide (MoS(2)) and gallium nitride (GaN) and its photodetection properties have been reported in the present work. Surface potential mapping at the MoS(2)/GaN heterojunction is done using Kelvin Probe Force Microscopy to measure the conduction band offset. Current-voltage measurements show a diode like behavior of the heterojunction. The origin of diode like behavior is attributed to unique type II band alignment of the heterojunction. The photocurrent, photoresponsivity and detectivity of the heterojunction are found to be dependent on power density of the light. Photoresponse investigations reveal that the heterojunction is highly sensitive to 405 nm laser with very high responsivity up to 10(5) A/W. The heterojunction also shows very high detectivity of the order of 10(14) Jones. Moreover, the device shows photoresponse in UV region also. These observations suggest that MoS(2)/GaN heterojunction can have great potential for photodetection applications.