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Understanding of MoS(2)/GaN Heterojunction Diode and its Photodetection Properties
Fabrication of heterojunction between 2D molybdenum disulfide (MoS(2)) and gallium nitride (GaN) and its photodetection properties have been reported in the present work. Surface potential mapping at the MoS(2)/GaN heterojunction is done using Kelvin Probe Force Microscopy to measure the conduction...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6081413/ https://www.ncbi.nlm.nih.gov/pubmed/30087388 http://dx.doi.org/10.1038/s41598-018-30237-8 |