Zn(1−x)Te(x) Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters

We have experimentally demonstrated a strong correlation between the electrical properties of Zn(1−x)Te(x) Ovonic threshold switching (OTS) selector device and the material properties analysed by X-ray diffraction (XRD), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy (XPS). The correlation and the key material parameters determining the device performances were investigated. By comparing the experimental data with the calculation results from various analytical models previously developed for OTS materials, the electrical properties of the device were shown to be dependent on the key material parameters; the concentration of sub-gap trap states and the bandgap energy of the OTS material. This study also experimentally demonstrated that those key parameters have determined the device performance as expected from the analytical model. The origin of the OTS phenomenon and conduction mechanism were explained both experimentally and theoretically. This leads to better understanding of the conduction mechanism of OTS devices, and an insight for process improvement to optimize device performance for selector application.