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Admittance of Atomic and Molecular Junctions and Their Signal Transmission
Atom-sized contacts of metals are usually characterized by their direct current (DC) conductance. However, when atom-sized contacts are used as device interconnects and transmit high frequency signals or fast pulses, the most critical parameter is not their DC conductance but their admittance [Formu...
Autor principal: | |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6082278/ https://www.ncbi.nlm.nih.gov/pubmed/30424253 http://dx.doi.org/10.3390/mi9070320 |
Sumario: | Atom-sized contacts of metals are usually characterized by their direct current (DC) conductance. However, when atom-sized contacts are used as device interconnects and transmit high frequency signals or fast pulses, the most critical parameter is not their DC conductance but their admittance [Formula: see text] , in particular its imaginary part [Formula: see text]. In this article, I will present a brief survey of theoretical and experimental results on the magnitude of [Formula: see text] for atom-sized contacts of metals. Theoretical contact models are first described and followed by numerical evaluation of [Formula: see text] based on these models. As for experiments on [Formula: see text] , previous experiments conducted under time-varying biases are surveyed, and then the results of direct signal transmission through atom-sized contacts are discussed. Both theoretical and experimental results indicate that [Formula: see text] is negligibly small for typical atom-sized contacts for signal frequencies up to 1 GHz. |
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